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Recently, stable 2D wide-bandgap semiconductors with excellent electronic and photoelectronic properties have attracted much scientific and technological interest. In this study, we predict a novel InTeI monolayer which has a wide bandgap of 2.735 eV and a anisotropic electron mobility as high as 12 137.80 cm2 V-1 s-1 based on first-principles calculations. With an exfoliating energy lower than that of monolayer phosphorene, it is feasible to synthesize the 2D InTeI monolayer through mechanical exfoliation from their 3D bulk crystals. Rema