https://www.selleckchem.com/pr....oducts/bzatp-triethy
Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture. To overcome the ambipolar current, asymmetry must be introduced between the source and drain. In this paper, we investigate the performances of DG TFET with step channel thickness (SC TFET) by utilizing the 2D simulation. The asymmetry between source and drain is introduced through the
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