https://www.selleckchem.com/pr....oducts/cilengitide-e
Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can-as we have previously shown-also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the etching rate is not too high and the abrasion at the etch front is not totally chaotic. Moreover, we have proven that-using RAS equipment and optical Fabry‒Perot oscillations due to the ever-shrinking thickness of the uppermost etched layer-the in situ etch-dep
Like
Comment
Share
