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These quantum dot devices also exhibit good mechanical security amongst numerous thin-film photovoltaic technologies. We prove greater technical endurance of quantum dot films compared to bulk thin film and emphasize the necessity of additional analysis on high-performance and flexible optoelectronic devices making use of nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial structure consisting of CsPbI3 quantum dot/PCBM heterojunction, allow