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Meta-analysis of all Plackett-Burman assays determined that rate and stirring time were effective on the retention rate thereby these parameters were used for the surface response methodology part. Each combination gives a different optimum depending on the structure of these molecules.This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz.
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