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3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm², and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO₂/SiN dual gate-insulator is a promising candidate for power electronic applications.In this study, we propose, fabricate, and examine the electrical characteristics of high-performance channel-engineered amorphous aluminum-doped zinc tin oxide (a-AZTO) thin-film transistors (TFTs). Amorphous indium g

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