https://www.selleckchem.com/pr....oducts/ca-074-methyl
Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. The results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy dispersive x-ray (EDX) spectroscopy and x-ray photoelectron (XPS) spectroscopy revealed traces of oxygen, carbon and nitrogen occurring either as contamination or as an effect of doping during the GaN growth process. In addition,
Like
Comment
Share
