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Ultraviolet-C AlGaN resonant-cavity light-emitting diodes with top and bottom pipe-AlGaN-distributed Bragg reflectors (DBRs) have-been demonstrated. For the top/bottom DBR structures, 20 pairs of n+-AlGaNSi/n-AlGaNSi stack structures had been transformed to the pipe-AlGaNSi/n-AlGaNSi DBRs through a doping-selective electrochemical wet etching process. The reflectivity associated with the pipe-AlGaN DBR structure ended up being calculated as 90% at 276.7 nm with a 20.9 nm level stopband width