https://www.selleckchem.com/products/CX-3543.html
We find that the narrow-band gap system shows performance gains when employing Au as the back electrode. Furthermore, we show that these performance gains are dependent on active layer thickness, yielding the most significance for thin active layers ( less then 100 nm). Such thin, ultra-narrow-band gap devices are the focus of near-IR sensing applications, highlighting the importance of methodically choosing the back electrode. Lastly, the impact of the back electrode on the OPV device performance is outlined.Developing powerful real-ti
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