https://www.selleckchem.com/pr....oducts/l-ornithine-l
In this study, a new type of compact magnetic memristor is demonstrated. It is based on the variation of the conductivity of a nano-sized magnetic tunnel junction as a function of the angle between the in-plane reference layer magnetization and a free layer exhibiting an isotropic in-plane coercivity. The free layer magnetization is rotated by two spin transfer torque contributions one originating from the in-plane magnetized reference layer and the other one from an additional perpendicular polarizer integrated in the s
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