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Strain induced by lattice distortion is one of the key factors that affect the photovoltaic performance via increasing defect densities. The unsatisfied power conversion efficiencies (PCEs) of solar cells based on antimony chalcogenides (Sb-Chs) are owing to their photoexcited carriers being self-trapped by the distortion of Sb2S3 lattice. However, strain behavior in Sb-Chs-based solar cells has not been investigated. Here, strain tuning in Sb-Chs is demonstrated by simultaneously replacing Sb and S with larger Bi and I ions, respective
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