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We report spin-dependent transport properties and I-V hysteresis characteristics in an [Formula see text]-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the [Formula see text] layer. The role played by oxygen vacancies in [Formula
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