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An ideal electron transporting layer (ETL) of perovskite solar cells (PSCs) requires reasonable energy levels, high electrical conductivity and excellent charge extraction. The low processing temperature makes ZnO a promising ETL for PSCs; however the widely used solution-processed ZnO films often suffer from high-density surface defect states, which might cause severe charge recombinations at the ETL/perovskite interface and accelerate the chemical decomposition of perovskite materials. In this work, we employed the vacuum-based magnet
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