https://www.selleckchem.com/pr....oducts/n-nitroso-n-m
For p-MOS TMD channel transistors 25 out of 30 combinations have a smaller leakage current than hexagonal boron nitride (hBN), a well-known vdW dielectric. The smallest bilayer leakage current of 1.15 × 10-2 A cm-2 is predicted for a p-MOS MoSe2 transistor with HfNCl as a gate dielectric. HfNBr, ZrNBr, and ZrNCl are also predicted to yield small leakage currents in certain p-MOS TMD transistors.The ferroelectric material In2Se3 is currently of significant interest due to its built-in polarisation characteristics that can
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