https://www.selleckchem.com/pr....oducts/midostaurin-p
We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO2 as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent attack of the Al layer, achieving an outstanding etch rate of thermally grown SiO2 of ≈1 µm·min-1. We also verified that this etching solution only minimally affected the Al layer, as the chip immersion for ≈9 min increased the Al laye
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