https://www.selleckchem.com/pr....oducts/bgj398-nvp-bg
Low density charge mobility from below bandgap, two-photon photoexcitation of bulk silicon (Si) is interrogated using time-resolved terahertz spectroscopy (TRTS). Total charge mobility is measured as a function of excitation frequency and fluence (charge carrier density), cut angle, and innate doping levels. Frequency dependent complex photoconductivities are extracted using the Drude model to obtain average and DC-limit mobility and carrier scattering times. These dynamic parameters are compared to values from contact-based H
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