https://www.selleckchem.com/products/didox.html
The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown
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