https://www.selleckchem.com/products/odm-201.html
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opport
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