https://www.selleckchem.com/products/deg-77.html
A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs) has been developed, leading to the demonstration of ultrasmall, ultraefficient, and ultracompact green μLEDs with a dimension of 3.6 μm and an interpitch of 2 μm. The approach does not involve any dry-etching processes which are exclusively used by any current μLED fabrication approaches. As a result, our approach has entirely eliminated any damage induced during the dry-etching processes. Our green μLED array chips exhibit a rec
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