https://www.selleckchem.com/products/didox.html
Conductance quantization (QC) phenomena occurring in metal oxide based memristors demonstrate great potential for high-density data storage through multilevel switching, and analog synaptic weight update for effective training of the artificial neural networks. Continuous, linear and symmetrical modulation of the device conductance is a critical issue in QC behavior of memristors. In this contribution, we employ the scanning probe microscope (SPM) assisted electrode engineering strategy to control the ion migration process to construct si
Like
Comment
Share
