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24 ± 0.04 monolayers. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer confinement as good as similarly prepared phosphorus layers, while still retaining 80% carrier activation and sheet resistances of less then 2 kΩ/square. These excellent characteristics of arsenic represent opportunities to enhance existing capabilitie
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