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Topological materials, such as the quintessential topological insulators in the Bi2X3 family (X = O, S, Se, Te), are extremely promising for beyond Moore's Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topological nature of these materials changes with growth conditions and, more specifically, chalcogen content. In this study, we investigate the evolution of the magnetoresistance of Bi2TexSe3-x for varying chalcogen ratios and constant growth condition