https://www.selleckchem.com/pr....oducts/vps34-inhibit
Surface oxidation employing neutral oxygen irradiation significantly improve the switching and synaptic performance of ZnO-based transparent memristor devices. The endurance of the as-irradiated device is increased by 100 times, and the operational current can be lowered by 10 times as compared with the as-deposited device. Moreover, the performance-enhanced device has an excellent analog behavior that can exhibit 3-bits per cell nonvolatile multistate characteristics and perform 15 stable epochs of synaptic operations with hi
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