https://www.selleckchem.com/products/sant-1.html
4 μA/μm, and a high retention time of 105 ms at a high temperature of 358 K. In addition, it has been verified that a single cycle of 1T-DRAM operations consumes only 33.6 fJ of energy, which is smaller than for previously proposed 1T-DRAMs.A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). The juncap2 model is successfully combined with BSIM
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