https://www.selleckchem.com/pr....oducts/fluorescein-5
In this study, p-Phenylenediaminium iodide (PDAI) is used to in-situ growth of 2D (PDA)2PbI4 perovskite layer between (FAPbI3)0.85(MAPbBr3)0.15 3D perovskite and CuSCN as a cheap hole transport layer. The results indicate that the incorporation of 5 mg mL-1 PDAI leads to enlarged grain sizes, compact grain boundaries, reduced trap density, efficient charge extraction, and enhanced stability of perovskite film. Passivation of perovskite film with the appropriate amount of PDAI helps in achieving efficient perovs
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