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Aqueous Zn-storage behaviors of MoS2 -based cathodes mainly rely on the ion-(de)intercalation at edge sites but are limited by the inactive basal plane. Herein, an in-situ molecular engineering strategy in terms of structure defects manufacturing and O-doping is proposed for MoS2 (designated as D-MoS2 -O) to unlock the inert basal plane, expand the interlayer spacing (from 6.2 to 9.6 Å), and produce abundant 1T-phase. The tailored D-MoS2 -O with excellent hydrophilicity and high conductivity allows the 3D Zn2+ transport along both the